RESUMO
The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create the sulfide structure as CdS nano-ropes form, followed by depositing on the Si-substrate by spin coating. The morphological, structural, and optical characteristics of the CdS structure were examined using X-ray diffraction, transmission, and scanning electron microscopy, photoluminescence, and UV-VIS spectroscopy. From X-ray diffraction analysis, the growing CdS spheres have a good crystal nature, with a high purity and desired c-axis orientation along the (002) plane, and the crystallinity was around 30 nm. According to optical characterization, high transparency was found in the visible-near-infrared areas of the electromagnetic spectrum, and the CdS spheres have a direct optical energy band gap of 3.2 eV. After that, the CdS/Si hetero-structured device was found to be improved remarkably after adding CdS. It showed that the forward current is constantly linear, while the dark current is around 4.5 µA. Up to a bias voltage of 4 V, there was no breakdown, and the reverse current of the heterojunctions somewhat increased with reverse bias voltage, while the photocurrent reached up to 580 and 690 µA for using 15 and 30 W/cm2 light power, respectively. Additionally, the ideal factors for CdS/Si heterojunction were 3.1 and 3.3 for 15 and 30 W/cm2 light power, respectively. These results exhibited high performance compared to the same heterojunction produced by other techniques. In addition, this opens the route for obtaining more enhancements of these values based on the changing use of sulfide structures in the heterojunction formation.
RESUMO
A polymeric nanocomposite film, composed of PMMA/PVDF and different amounts of CuO NPs, was successfully prepared using the casting method to enhance its electrical conductivity. Various techniques were employed to investigate their physicochemical properties. The addition of CuO NPs causes a noticeable difference in the intensities and locations of vibrational peaks in all bands, confirming the incorporation of CuO NPs inside the PVDF/PMMA. In addition, the broadening of the peak at 2θ = 20.6° becomes more intense with increasing amounts of CuO NPs, confirming the increase in the amorphous characteristic of PMMA/PVDF incorporated with CuO NPs in comparison with PMMA/PVDF. Furthermore, the image of the polymeric structure exhibits a smoother shape and interconnection of pore structure associated with spherical particles that agglomerate and give rise to a web-like organization that becomes a matrix. Increasing surface roughness is responsible for an increasing surface area. Moreover, the addition of CuO NPs in the PMMA/PVDF leads to a decrease in the energy band gap, and further increasing the additional amounts of CuO NPs causes the generation of localized states between the valence and conduction bands. Furthermore, the dielectric investigation shows an increase in the dielectric constant, dielectric loss, and electric conductivity, which may be an indication of an increase in the degree of disorder that confines the movement of charge carriers and demonstrates the creation of an interconnected percolating chain, enhancing its conductivity values compared with that without the incorporation of a matrix.
